Postdoctoral Appointee – (U)WBG Power Devices, Onsite

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Our team is seeking a Postdoctoral Appointee to work on advanced wide- and ultra-wide-bandgap (WBG/UWBG) semiconductor devices, with a focus on AlGaN power and breakdown devices. Are you interested in developing next-generation semiconductor technologies that enable higher efficiency and resilience in the nation’s energy infrastructure?

In this role, you will conduct innovative research on UWBG semiconductor devices, including AlGaN-based high-voltage and breakdown devices (e.g., Zener and avalanche diodes) as well as related device architectures. The work will span device design, in-house fabrication, and experimental characterization to advance high-voltage semiconductor technologies.

Devices will be fabricated in Sandia’s MESA microelectronics complex, enabling rapid iteration between design, fabrication, and experimental validation.

On any given day, you may be called on to:

• Assist in the design and simulation of WBG/UWBG semiconductor devices using advanced tools such as Technology Computer-Aided Design (TCAD)
• Develop and evaluate AlGaN-based device architectures, including high-voltage diodes and related power device structures
• Participate in device fabrication within Sandia’s MESA microelectronics facilities, including process development and execution for UWBG semiconductor devices
• Perform electrical and materials characterization to verify device performance, breakdown behavior, and reliability
• Analyze experimental data to provide feedback for device design optimization and future fabrication runs
• Collaborate with device physicists, materials scientists, and circuit designers to understand system-level requirements and enable integration into power electronics systems
• Publish research results in peer-reviewed journals and present findings at professional conferences

Due to the nature of the work, the selected applicant must be able to work onsite.

• Possess, or are pursuing, a PhD in electrical engineering, mechanical engineering, applied physics, materials science, or an equivalent field
• experience in semiconductor device research as evidenced by publications, patents, and/or professional conference presentations
• Ability to obtain and maintain a DOE L clearance

• Experience with semiconductor device research involving wide- or ultra-wide-bandgap materials (e.g., AlGaN, GaN, SiC, Ga2O3, or related materials), including TCAD simulation, device design, process flow development, mask layout, and electrical characterization with data acquisition and analysis
• Experience with high-voltage or high-field semiconductor devices, such as power diodes, breakdown devices (e.g., Zener or avalanche diodes), or power transistors
• Hands-on experience with cleanroom semiconductor fabrication processes (e.g., photolithography, etching, metallization, dielectric deposition, or annealing)
• Experience with electrical characterization of semiconductor devices, including breakdown, leakage, capacitance, and reliability measurements
• Proven interpersonal skills and the ability to work effectively with diverse, multidisciplinary teams
• Power electronic circuits such as DC/DC converters and inverters and the device requirements associated with these systems

The Semiconductor Material and Device Sciences Department 1873 is engaged in compound semiconductor physics and device research, with parallel, complementary efforts in fundamental science and novel device technologies, within 1800, the Center for Material, Physical, and Chemical Sciences. One of several current focus areas is wide-bandgap materials and devices for power electronics and other applications, which have enormous potential for Sandia’s missions. Other ongoing efforts include radiation effects and defect spectroscopy and magnetic materials research. The Department’s research uses staff expertise in experimental and theoretical semiconductor physics, innovative micro- and nano-fabrication, and advanced material and device characterization and modeling. It partners closely with other organizations, including the Advanced Electronic and Optoelectronic Materials Department 1876, other departments in Centers 1300, 5200, and 8800, and university and industry collaborators throughout the world. We make use of innovative growth and fabrication facilities associated with MESA (Sandia’s Microsystems Engineering, Science, and Applications complex); scientific facilities at CINT (the joint Sandia / Los Alamos Center for Integrated Nanotechnologies); and staff laboratories with a wide array of characterization equipment.

Our team is committed to nurturing an environment compatible with a broad group of people and perspectives in accordance with the changing makeup of the workforce. In support of this vision, our center actively recruits applicants from diverse groups of backgrounds and fosters an inclusive community.

This posting will be open for Application submissions for a minimum of three (3) calendar days, including the ‘posting date’. Sandia reserves the right to extend the posting date at any time.

Sandia is required by DOE to conduct a pre-employment drug test and background review that includes checks of personal references, credit, law enforcement records, and employment/education verifications. Applicants for employment need to be able to obtain and maintain a DOE L-level security clearance, which requires U.S. citizenship. If you hold more than one citizenship (i.e., of the U.S. and another country), your ability to obtain a security clearance may be impacted.

Applicants offered employment with Sandia are subject to a federal background investigation to meet the requirements for access to classified information or matter if the duties of the position require a DOE security clearance. Substance abuse or illegal drug use, falsification of information, criminal activity, serious misconduct or other indicators of untrustworthiness can cause a clearance to be denied or terminated by the DOE, resulting in the inability to perform the duties assigned and subsequent termination of employment.

All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, age, disability, or veteran status and any other protected class under state or federal law.

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If you have a MedPED and you are selected for an on-site interview at Sandia National Laboratories, there may be additional steps necessary to ensure compliance with NNSA security requirements prior to the interview date.